Download Defect Complexes in Semiconductor Structures by J. Giber, F. Beleznay, I. C. Szep, J. Laszlo PDF

By J. Giber, F. Beleznay, I. C. Szep, J. Laszlo

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Rab ¼ 7 þ 5 ¼ 12  ð12Þð6Þ Rcd ¼ ¼ 4 12 þ 6 Fig. 4-8 These two equivalents are in parallel (Fig. 4-9), giving Ref ¼ ð4Þð12Þ ¼ 3 4 þ 12 Then this 3- equivalent is in series with the 7- resistor (Fig. 4-10), so that for the entire circuit, Req ¼ 7 þ 3 ¼ 10  Fig. 4-9 Fig. 4-10 The total power absorbed, which equals the total power supplied by the source, can now be calculated as PT ¼ V2 ð60Þ2 ¼ 360 W ¼ Req 10 This power is divided between Rge and Ref as follows: Pge ¼ P7 ¼ 7 ð360Þ ¼ 252 W 7þ3 Pef ¼ 3 ð360Þ ¼ 108 W 7þ3 Power Pef is further divided between Rcd and Rab as follows: Pcd ¼ 12 ð108Þ ¼ 81 W 4 þ 12 Pab ¼ 4 ð108Þ ¼ 27 W 4 þ 12 44 ANALYSIS METHODS [CHAP.

13 Rtransfer;14 ¼ Vin ¼ 41RL þ 150 ðÞ I4 Obtain a The´venin equivalent for the circuit of Fig. 4-26 to the left of terminals ab. The short-circuit current Is:c: is obtained from the three-mesh circuit shown in Fig. 4-27.

13 Rtransfer;14 ¼ Vin ¼ 41RL þ 150 ðÞ I4 Obtain a The´venin equivalent for the circuit of Fig. 4-26 to the left of terminals ab. The short-circuit current Is:c: is obtained from the three-mesh circuit shown in Fig. 4-27.

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