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By Von Hardenberg C.
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5 V/µm), and the saturation velocity υsat approximately equals 105 m/s. This means that in an NMOS device with a channel length of 1 µm, only a couple of volts between drain and source are needed to reach the saturation point. This condition is easily met in current short-channel devices. Holes in a n-type silicon saturate at the same velocity, although a higher electrical field is needed to achieve saturation. Velocity-saturation effects are hence less pronounced in PMOS transistors. fm Page 98 Friday, January 18, 2002 9:00 AM 98 THE DEVICES Chapter 3 This effect has a profound impact on the operation of the transistor.
Moore, “Cramming more Components into Integrated Circuits,” Electronics, Vol. 38, Nr 8, April 1965. 6 Exercises 39 [Murphy93] B. , pp. 49–51, San Francisco, 1993. [Norman60] R. Norman, J. Last and I. Haas, “Solid-State Micrologic Elements,” ISSCC Digest of Technical Papers, pp. 82–83, Feb. 1960. [Hennessy96] J. Hennessy and D. Patterson, Computer Architecture A Quantitative Approach, Second Edition, Morgan Kaufmann Publishers, 1996 [Saleh01] R. Saleh, M. page_name=wp_powerplan [Schockley49] W. Schockley, “The Theory of pn Junctions in Semiconductors and pn-Junction Transistors,” BSTJ, vol.
Shima74] M. Shima, F. Faggin and S. Mazor, “An N-Channel, 8-bit Single-Chip Microprocessor,” ISSCC Digest of Technical Papers, pp. 56–57, Feb. 1974. [Swade93] D. Swade, “Redeeming Charles Babbage’s Mechanical Computer,” Scientific American, pp. 86–91, February 1993. [Wanlass63] F. Wanlass, and C. Sah, “Nanowatt logic Using Field-Effect Metal-Oxide Semiconductor Triodes,” ISSCC Digest of Technical Papers, pp. 32–32, Feb. 1963. 6 Exercises 1. 2. 3. 4. 5. 2] Based on the evolutionary trends described in the chapter, predict the integration complexity and the clock speed of a microprocessor in the year 2015.